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In2te3 ferroelectric

WebDec 1, 2024 · Next, we show the band structures of InSe monolayers, In 2 Se 3 monolayers and the layered projected band structures of two ferroelectric phases in 2D InSe/In 2 Se 3 heterostructures in Fig. 2.Though the HSE06 hybrid functional calculations, it is obviously that the monolayer InSe and In 2 Se 3 are all indirect band gap semiconductors, with band … WebJan 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be...

(PDF) Study on Electronic Structure of β-In2Te3 Thermoelectric ...

WebFeb 1, 2024 · When stacking a Bi 2 Se 3 layer on top of a α -In 2 Se 3 ferroelectric layer, two different arrangements can be obtained, noted hereafter G1 and G 2, depending on the direction of the polarization vector: in the G 1 configuration, the spontaneous out-of-plane electric polarization P is pointing towards Bi 2 Se 3 while in the configuration G 2 it … WebMar 7, 2024 · The ferromagnetism of CrTe2 is maintained in CrTe2/In2Te3 and its magnetic easy axis can be switched from in-plane to out-of-plane by reversing the FE polarization of … shared sketch solidworks https://paulbuckmaster.com

In2Te3 thin films: a promising nonlinear optical material …

WebSep 9, 2024 · In addition, an abnormal resistive switching phenomenon in α-In 2 Se 3 is reported when operated in the in-plane ferroelectric switching mode. The findings pave … WebAug 1, 2024 · The reversible polarization of ferroelectric semiconductor In 2 Se 3 can be used to realize the tunable photoelectric properties of the heterostructures. In this work, we construct the two-dimensional (2D) Janus WSSe/In 2 Se 3 van der Waals heterostructures (vdWHs), where Janus WSSe monolayer has an intrinsic out-of-plane dipole moment. First … WebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3. shared smartsheet report is blank

Negative Differential Friction Predicted in 2D Ferroelectric In

Category:Prediction of intrinsic two-dimensional ferroelectrics in In

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In2te3 ferroelectric

Room-Temperature Ferroelectricity in Hexagonally …

WebA theoretical design for an ON–OFF switchable HER catalyst using the two-dimensional ferroelectric (2D-FE) III 2 VI 3 compound In 2 Se 3 is reported in this paper. With vertical stacking of the basal plane of In 2 Se 3 on top of the transition metal cobalt, a set of ab initio calculations reveals that the reversible polarization switching of In 2 Se 3 can turn the … WebOct 30, 2024 · Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small ...

In2te3 ferroelectric

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WebApr 7, 2024 · The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In 2 Se 3 /graphene, exhibiting a tunable Schottky barrier ... WebHere, we propose that, in 2D materials with out-of-plane ferroelectricity, the antibonding nature of the valence band maximum and conduction band minimum and polarized charge distribution induced by ferroelectricity give rise to giant changes of the bandgap under curvature strain field.

WebThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, rather than the long-range Coulomb interactions in conventional displacement-type ferroelectrics. WebOur work on polar α-In 2 Se 3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic …

WebAbstract. van der Waals layered α-In 2 Se 3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an … WebOct 6, 2024 · In the In 2 Te 3 monolayer, each unit cell consists of two In atoms and three Te atoms, which are arranged in the sequence of Te–In–Te–In–Te [ 38, 45 ]. The calculated lattice parameters of the In 2 Te 3 monolayer are determined to be a = b = 4.37 Å, which also coincides well with previous findings [ 38 ].

WebJan 1, 2005 · Ga 2 Te 3 single crystals were grown by a modification of the travelling heater method technique (THM). The samples used in this work were prepared by this new …

WebDec 31, 2011 · Abstract and Figures The objective of this research was simulated the electronic structure of In2Te3 thermoelectric material by using discrete variational-Xα (DV-Xα) cluster models method based... shared smartphone jukeboxWebJun 16, 2024 · At room temperature, α -In 2 Se 3 exhibits 2D ferroelectricity that is currently under intensive investigation 15, 38, 42, 43, 44, 45, 46. β’ -In 2 Se 3, on the other hand, … poolwerx rockhamptonWebDec 12, 2024 · The correlated polymorphism and ferroelectricity in 2D In 2 Se 3 provide vast opportunities in tailoring the FE structures and … shared smokeWebUtilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe-In 2 Te 3 and attribute it mainly to the strong vacancy originated phonon scattering between Sn atoms and the vacancies introduced by In 2 Te 3 alloying and partly to the interfacial scattering by In-rich nanoprecipitates present in SnTe … poolwerx mandurahWebUtilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe–In 2 Te 3 and attribute it mainly to the strong vacancy originated … pool werx fort worthWebOct 12, 2016 · Abstract A series of In 2 Te 3 thin films with various thicknesses was prepared on fused quartz substrate using a radio-frequency magnetron sputtering … shared slideshowsWebFeb 9, 2024 · Indium selenide (In 2 Se 3) is an attractive layered semiconductor material with promising optoelectronic and piezoelectric applications. In this work, single-crystalline α … shared smoking